The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Dec. 10, 2015
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Boe (Hebei) Mobile Display Technology Co., Ltd., Gu'An, Hebei, CN;

Inventors:

Jianjie Wu, Beijing, CN;

Lili Chen, Beijing, CN;

Ruijun Dong, Beijing, CN;

Chenru Wang, Beijing, CN;

Guangquan Wang, Beijing, CN;

Haiwei Sun, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/38 (2010.01); H01L 33/20 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/40 (2013.01); H01L 33/46 (2013.01); H01L 2933/0008 (2013.01);
Abstract

The present application discloses a light emitting diode comprising a substrate; and a light emitting layer on the substrate. The light emitting layer comprises, an N-type doped layer; a quantum well active layer; and a P-type doped layer. At least one of the N-type doped layer and the P-type doped layer comprises an uneven layer adapted to concentrate light emitting from the light emitting layer.


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