The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Feb. 14, 2018
Applicant:

Commissariat À L'énegie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Hubert Bono, Grenoble, FR;

Jonathan Garcia, Clelles-en-Trieves, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 27/0207 (2013.01); H01L 27/153 (2013.01); H01L 29/861 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 33/382 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/12041 (2013.01);
Abstract

A diode including a vertical stack of first and second semiconductor regions having opposite conductivity types, and a first electrode for biasing its first region arranged in a trench extending from the surface of the second region opposite to the first region, the first electrode including, in top view, the following conductive elements: a polygonal ring; for each vertex of the polygonal ring, a first rectilinear bar extending between the vertex and the center of the ring, substantially along a direction running from the vertex to the center of the ring; and for each first bar, a plurality of second rectilinear bars extending from the first bar substantially parallel to the sides of the ring, starting from the vertex forming the origin of the first bar.


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