The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Oct. 24, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Stephen W. Bedell, Wappingers Falls, NY (US);
Keith E. Fogel, Hopewell Junction, NY (US);
Paul A. Lauro, Brewster, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/36 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/36 (2013.01); H01L 33/44 (2013.01); H01L 21/02505 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract
A method of producing a semiconductor device includes forming a stack including a semiconductor material having a Group III nitride semiconductor material formed on a growth substrate, a protective layer formed over the Group III nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate from the stack.