The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Mar. 01, 2016
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Tobias Meyer, Regensburg, DE;
Thomas Lehnhardt, Regensburg, DE;
Matthias Peter, Regensburg, DE;
Asako Hirai, Regensburg, DE;
Juergen Off, Regensburg, DE;
Philipp Drechsel, Regensburg, DE;
Peter Stauss, Regensburg, DE;
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Abstract
The invention relates to a component () having a semiconductor layer sequence, which has a p-conducting semiconductor layer (), an n-conducting semiconductor layer (), and an active zone () arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers () having intermediate quantum well layers () and a plurality of n-side barrier layers () having intermediate quantum layers (). Recesses () having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.