The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Feb. 03, 2017
Applicant:
Stc.unm, Albuquerque, NM (US);
Inventors:
Ganesh Balakrishnan, Albuquerque, NM (US);
Adam Alexander Hecht, Albuquerque, NM (US);
Erin Ivey Vaughan, Albuquerque, NM (US);
Assignee:
STC.UNM, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/08 (2006.01); H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/0216 (2014.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/085 (2013.01); H01L 31/02161 (2013.01); H01L 31/0304 (2013.01); H01L 31/03042 (2013.01); H01L 31/0392 (2013.01); H01L 31/184 (2013.01);
Abstract
Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).