The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Jan. 15, 2018
Applicant:
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Inventors:
Chun Kai Huang, Xiamen, CN;
Chun-Yi Wu, Xiamen, CN;
Duxiang Wang, Xiamen, CN;
Chaoyu Wu, Xiamen, CN;
Jin Wang, Xiamen, CN;
Assignee:
XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 31/0304 (2006.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/30 (2010.01); H01L 31/0352 (2006.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 31/0304 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/30 (2013.01); H01L 31/0352 (2013.01); H01L 33/405 (2013.01); H01L 2933/0016 (2013.01);
Abstract
An infrared light-emitting diode includes, from up to bottom, a P-type ohmic electrode, a contact layer, a P-type cladding layer, an active layer, an N-type cladding layer, a buffer layer, a GaAs substrate and an N-type ohmic electrode. The N-type cladding layer and the P-type cladding layer or either of them is InGaAs. The cladding layer of InGaAs, due to low resistance, can improve current expansion, reduce voltage and improve light-emitting efficiency.