The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Feb. 20, 2018
Silanna Asia Pte Ltd, Singapore, SG;
Shanghui Larry Tu, San Diego, CA (US);
Michael A. Stuber, Rancho Santa Fe, CA (US);
Befruz Tasbas, San Diego, CA (US);
Stuart B. Molin, Carlsbad, CA (US);
Raymond Jiang, Raleigh, NC (US);
Silanna Asia Pte Ltd, Singapore, SG;
Abstract
In an active layer over a semiconductor substrate, a semiconductor device has a first lateral diffusion field effect transistor (LDFET) that includes a source, a drain, and a gate, and a second LDFET that includes a source, a drain, and a gate. The source of the first LDFET and the drain of the second LDFET are electrically connected to a common node. A first front-side contact and a second front-side contact are formed over the active layer, and a substrate contact electrically connected to the semiconductor substrate is formed. Each of the first front-side contact, the second front-side contact, and the substrate contact is electrically connected to a different respective one of the drain of the first LDFET, the source of the second LDFET, and the common node.