The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Dec. 21, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A substrate includes a pattern forming region and a peripheral region. A first strain relaxed buffer layer is disposed on the pattern forming region of the substrate. A second strain relaxed buffer layer is disposed on the peripheral region of the substrate. A first insulating film pattern is disposed on the substrate. At least a portion of the first insulating film pattern is disposed within the first strain relaxed buffer layer. An upper surface of the first insulating film pattern is covered with the first strain relaxed buffer layer. A second insulating film pattern is disposed on the substrate. At least a portion of the second insulating film pattern is disposed within the second strain relaxed buffer layer. An upper surface of the second insulating film pattern is covered with the second strain relaxed buffer layer. A gate electrode is disposed on the first strain relaxed buffer layer.