The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Apr. 10, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Nicolas Degors, Le Versoud, FR;
Terence B. Hook, Jericho, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); H01L 21/7624 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/205 (2013.01); H01L 29/42368 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 21/823412 (2013.01); H01L 21/823807 (2013.01); H01L 21/845 (2013.01); H01L 27/0922 (2013.01); H01L 2029/7858 (2013.01);
Abstract
The invention includes a semiconductor device comprising an interlevel dielectric layer over a buried insulator layer over a semiconductor substrate; a source and drain in the interlevel layer; a channel between the source and drain, the channel including a first region having a first bandgap adjacent to a second region having a second bandgap, wherein the first band gap is larger than the second bandgap; and a gate over the channel.