The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
May. 13, 2015
Joseph T. Smith, Tempe, AZ (US);
Michael Goryll, Mesa, AZ (US);
Sahil Shah, Ahmendabad, IN;
Jennifer Blain Christen, Chandler, AZ (US);
John Stowell, Tempe, AZ (US);
Joseph T. Smith, Tempe, AZ (US);
Michael Goryll, Mesa, AZ (US);
Sahil Shah, Ahmendabad, IN;
Jennifer Blain Christen, Chandler, AZ (US);
John Stowell, Tempe, AZ (US);
Other;
Abstract
A flexible ion-selective field effect transistor (ISFET) and methods of making the same are disclosed. The methods may comprise: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile