The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Nov. 28, 2017
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Youngkyun Jung, Seoul, KR;
NackYong Joo, Gyeonggi-do, KR;
Junghee Park, Gyeonggi-do, KR;
Hyun Woo Noh, Seoul, KR;
JongSeok Lee, Gyeonggi-do, KR;
Dae Hwan Chun, Gyeonggi-do, KR;
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Abstract
A manufacturing method of a semiconductor device is provided. The method includes sequentially forming an n− type of layer, a p type of region, and an n+ type of region on a first surface of a substrate, forming a preliminary trench in the n− type of layer by a first etching process and forming a preliminary gate insulating layer by a first thermal oxidation process. The method includes etching the lower surface of the preliminary trench and the preliminary second portion to form a trench by a second etching process and forming a gate insulating layer in the trench by a second thermal oxidation process. The gate insulating layer includes a first and second portion. The preliminary first portion is thicker than the preliminary second portion and the first portion. The first portion thickness is equal to the thickness of the second portion.