The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Mar. 30, 2017
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Wentao Yang, Kowloon, HK;

Johnny Kin On Sin, Kowloon, HK;

Yuichi Onozawa, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/3213 (2006.01); H01L 21/761 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/32131 (2013.01); H01L 21/32139 (2013.01); H01L 21/761 (2013.01); H01L 29/0623 (2013.01); H01L 29/401 (2013.01); H01L 29/404 (2013.01); H01L 29/408 (2013.01);
Abstract

At edge termination region, a trench is disposed near an interface of an active region. Inside the trench, an embedded insulating film is embedded, and inside the embedded insulating film, a FP long in a direction of depth is disposed. The FP curves outwardly away from an inner side wall of the trench as a depth from a base front surface increases. At least near a bottom end of the FP, a distance between the FP and the inner side wall of the trench is greater than a width of the groove. The FP is connected to a front surface electrode that extends on the embedded insulating film. As a result, breakdown voltage may be enhanced, adverse effects of the surface charge may be reduced, and chip size may be further reduced.


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