The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Feb. 08, 2018
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Tatsuo Shimizu, Shinagawa, JP;
Masayasu Miyata, Kawasaki, JP;
Hirotaka Nishino, Yokohama, JP;
Yoshihiko Moriyama, Setagaya, JP;
Yuichiro Mitani, Hayama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/36 (2006.01); H01L 21/04 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/868 (2006.01); H01L 29/45 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0465 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/417 (2013.01); H01L 29/45 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01); H01L 29/868 (2013.01); H01L 29/872 (2013.01); H01L 21/0475 (2013.01); H01L 21/0485 (2013.01); H01L 29/086 (2013.01); H01L 29/0865 (2013.01); H01L 29/0878 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a metal layer; an n-type first silicon carbide region; and a second silicon carbide region of metal containing at least one element selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) and positioned between the metal layer and the first silicon carbide region.