The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Jan. 30, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Keiko Ariyoshi, Tsukuba, JP;
Ryosuke Iijima, Setagaya, JP;
Shinya Kyogoku, Tsukuba, JP;
Shinsuke Harada, Tsukuba, JP;
Yusuke Kobayashi, Nagareyama, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, first to fourth semiconductor regions and a first insulating film. The second electrode includes first, second, and third electrode regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. The first partial region is separated from the first electrode. The second partial region is separated from the first electrode region. The fourth partial region is separated from the second electrode region. The second semiconductor region includes sixth, seventh, eighth and ninth partial regions. The third semiconductor region is connected to the second semiconductor region. The fourth semiconductor region is electrically connected to the second electrode. The fourth semiconductor region includes tenth, eleventh, and twelfth partial regions. The first insulating film is provided between the first, third, and fourth semiconductor regions.