The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Mar. 13, 2017
Applicant:
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Inventor:
Hideo Yoshino, Chiba, JP;
Assignee:
ABLIC Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 27/027 (2013.01);
Abstract
A semiconductor device includes a MOS transistor and an ESD protection element comprised of an NMOS off transistor having a gate potential equal to a ground potential or a well potential. The off transistor has an N-type drain region and a P-type drain region in a drain active region thereof. The P-type region has a potential that is the potential of a P well or a P-type semiconductor substrate. A junction withstand voltage of a PN junction in the drain active region is the withstand voltage of the ESD protection element.