The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Jan. 29, 2016
Applicant:
Csmc Technologies Fab2 Co., Ltd., Wuxi New District, Jiangsu, CN;
Inventor:
Shukun Qi, Jiangsu, CN;
Assignee:
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi New District, Jiangsu, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H01L 29/66568 (2013.01); H01L 29/66659 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/0623 (2013.01);
Abstract
A laterally diffused metal oxide semiconductor field-effect transistor, comprising a substrate (), a source electrode (), a drain electrode (), a body region (), and a well region on the substrate, the well region comprising: an insertion-type well () having P-type doping, being arranged below the drain electrode and being connected to the drain electrode; N wells (), arranged on two sides of the insertion-type well; and P wells (), arranged next to the N wells and being connected to the N wells; the source electrode and the body region are arranged in the P well.