The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Nov. 13, 2017
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventor:

Arnaud Peizerat, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/363 (2011.01); H04N 5/374 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); H04N 5/363 (2013.01); H04N 5/374 (2013.01);
Abstract

A CMOS pixel including a photodiode having a terminal connected to a potential GND and another terminal connected to a sense node by a first MOS transistor; a second MOS transistor connecting the sense node to a potential VDDH; and a third MOS transistor having its gate connected to the sense node, the transistors having a same gate insulator thickness, wherein the third transistor has a gate length and/or width smaller than those of the first and second transistors, wherein difference VDDH-GND is greater than the nominal voltage of the third MOS transistor, and wherein the body or drain region of the third transistor is connected to a potential VL between potentials VDDH and GND.


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