The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Feb. 26, 2016
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Yoshiaki Tashiro, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/378 (2011.01); H04N 5/369 (2011.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/146 (2013.01); H01L 27/14621 (2013.01); H01L 27/14641 (2013.01); H01L 27/14647 (2013.01); H04N 5/3696 (2013.01); H04N 5/378 (2013.01); H01L 27/1464 (2013.01); H01L 27/14614 (2013.01); H01L 27/14627 (2013.01); H01L 29/4236 (2013.01);
Abstract

The present disclosure relates to a solid-state image sensing device, a drive method, and an electronic apparatus that are configured to suppress the color mixture of a phase difference detection signal to an image sensing signal. The solid-state image sensing device has a pixel area configured to be arranged with a plurality of pixels in which a first photoelectrical conversion section for photoelectrically converting a visible light of a first wavelength range and a second photoelectrical conversion section for photoelectrically converting a visible light of a second wavelength range are formed in different depths as viewed from a cross-sectional direction, and a drive section configured to execute a drive operation of reading each pixel signal having a level corresponding to charges generated in each of the first photoelectrical conversion section and the second photoelectrical conversion section from each of the above-mentioned plurality of pixels. Further, in each of the above-mentioned plurality of pixels, at least one of the first photoelectrical conversion section and the second photoelectrical conversion section is configured as divided when viewed from a planar direction. The present technology is applicable to a solid-state image sensing device capable of detecting an image plane phase difference, for example.


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