The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Dec. 15, 2017
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Abstract
The invention provides a manufacturing method of top-gate TFT and top-gate TFT. The manufacturing method forms first and second insulating layers sequentially on a base substrate, and uses a first mask to form first and second vias separated with interval on the second insulating layer, forms a through groove on the first insulation layer below the first and second vias, the through groove connects the first and second vias, and forms a vertical U-shaped trench with the first and second vias, then fills the vertical U-shaped trench to form an active layer, and finally uses a second mask to form a source, a drain, and a gate on the second insulating layer. As such, the top-gate TFT structure is simplified and the number of mask processes is reduced. With two mask processes to manufacture a top-gate TFT with vertical U-shaped trench, the invention saves the manufacturing cost.