The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Dec. 05, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ralf Richter, Radebeul, DE;

Sven Beyer, Dresden, DE;

Jan Paul, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 27/11521 (2017.01); H01L 27/11526 (2017.01); H01L 27/11531 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11531 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/1207 (2013.01); H01L 29/42328 (2013.01); H01L 29/42336 (2013.01);
Abstract

An integrated circuit product includes a silicon-on-insulator (SOI) substrate and a flash memory device positioned in a first area of the SOI substrate. The SOI substrate includes a semiconductor bulk substrate, a buried insulating layer positioned above the semiconductor bulk substrate, and a semiconductor layer positioned above the buried insulating layer, and the flash memory device includes a flash transistor device and a read transistor device. The flash transistor device includes a floating gate, an insulating layer positioned above the floating gate, and a control gate positioned above the insulating layer, wherein the floating gate includes a portion of the semiconductor layer. The read transistor device includes a gate dielectric layer positioned above the semiconductor bulk substrate and a read gate electrode positioned above the gate dielectric layer.


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