The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Feb. 14, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Aravind Chennimalai Appaswamy, Plano, TX (US);

James P. Di Sarro, Allen, TX (US);

Krishna Praveen Mysore Rajagopal, Santa Clara, CA (US);

Akram A. Salman, Plano, TX (US);

Muhammad Yusuf Ali, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H04L 21/00 (2006.01); H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0255 (2013.01); H01L 29/083 (2013.01); H01L 29/1095 (2013.01); H01L 29/7393 (2013.01);
Abstract

In some examples, an electrostatic discharge (ESD) device comprises an insulated-gate bipolar transistor (IGBT) comprising a source terminal, an anode terminal, a gate terminal, and a body terminal; and at least one reverse bias device comprising a first terminal and a second terminal, wherein the first terminal couples to the source terminal and the second terminal couples to the body terminal.


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