The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Mar. 12, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Kunmo Chu, Seoul, KR;
Changyoul Moon, Suwon-si, KR;
Sunghee Lee, Suwon-si, KR;
Junsik Hwang, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 24/24 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/0657 (2013.01); H01L 33/0079 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/33 (2013.01); H01L 24/48 (2013.01); H01L 24/82 (2013.01); H01L 24/94 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/24146 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73217 (2013.01); H01L 2224/73227 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73259 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/82101 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/8381 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83204 (2013.01); H01L 2224/83825 (2013.01); H01L 2224/83948 (2013.01); H01L 2224/92 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/92144 (2013.01); H01L 2224/92244 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06517 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3512 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A semiconductor device includes a base substrate and a semiconductor chip on the base substrate, the semiconductor chip including a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound.