The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Mar. 08, 2018
Applicant:

Ablic Inc., Chiba-shi, Chiba, JP;

Inventors:

Takeshi Morita, Chiba, JP;

Shinjiro Kato, Chiba, JP;

Masaru Akino, Chiba, JP;

Yukihiro Imura, Chiba, JP;

Assignee:

ABLIC INC., Chiba-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/562 (2013.01); H01L 24/03 (2013.01); H01L 2224/0226 (2013.01); H01L 2224/02251 (2013.01); H01L 2224/02255 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05124 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor device includes: a substrate; a wiring formed above the substrate; a titanium nitride film formed on the wiring; an oxide film formed on the titanium nitride film; a silicon nitride film formed on the oxide film; and a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon nitride film and a second opening portion formed in the titanium nitride film overlap with each other in plan view, and being inside a third opening portion formed in the oxide film in plan view, wherein the silicon nitride film is formed on top of and in contact with the titanium nitride film inside the third opening portion in plan view.


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