The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Apr. 27, 2017
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Choong Man Lee, Chungcheongnam-do, KR;
Yong Min Yoo, Seoul, KR;
Young Jae Kim, Chungcheongnam-do, KR;
Seung Ju Chun, Chungcheongnam-do, KR;
Sun Ja Kim, Chungcheongnam-do, KR;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 21/02074 (2013.01);
Abstract
A semiconductor manufacturing method includes depositing a low-k dielectric layer, forming a trench in the low-k dielectric layer, forming a barrier layer in the trench, filling a metal on the barrier layer, planarizing the metal, and forming a capping layer on the planarized metal, wherein the capping layer includes at least two layers.