The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Oct. 26, 2017
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
David T. Petzold, Chelmsford, MA (US);
David Scott Whitefield, Andover, MA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01); H01L 21/335 (2006.01); H01L 21/8234 (2006.01); H01L 23/00 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 23/66 (2006.01); H03H 9/24 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H04B 1/40 (2015.01); H01L 21/306 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/683 (2006.01); H01L 27/20 (2006.01); H03H 9/02 (2006.01); H01L 21/762 (2006.01); H01L 25/16 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/30604 (2013.01); H01L 21/6835 (2013.01); H01L 21/764 (2013.01); H01L 21/768 (2013.01); H01L 21/76251 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 21/76898 (2013.01); H01L 21/84 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 27/20 (2013.01); H01L 28/10 (2013.01); H01L 29/0649 (2013.01); H01L 29/66772 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H03H 9/02566 (2013.01); H03H 9/24 (2013.01); H04B 1/40 (2013.01); H04B 1/44 (2013.01); H01L 23/3121 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/16 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68368 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/03 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15313 (2013.01);
Abstract
A method for fabricating a semiconductor device involves providing a semiconductor substrate, forming an oxide layer in the semiconductor substrate, forming a transistor device over the oxide layer, removing at least part of a backside of the semiconductor substrate, applying a sacrificial material below the oxide layer, covering the sacrificial material with an interface material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.