The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Oct. 24, 2017
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
David T. Petzold, Chelmsford, MA (US);
David Scott Whitefield, Andover, MA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01); H01L 21/335 (2006.01); H01L 21/8234 (2006.01); H01L 23/00 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 23/66 (2006.01); H03H 9/24 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H04B 1/40 (2015.01); H01L 21/306 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/683 (2006.01); H01L 27/20 (2006.01); H03H 9/02 (2006.01); H01L 21/762 (2006.01); H01L 25/16 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/30604 (2013.01); H01L 21/6835 (2013.01); H01L 21/764 (2013.01); H01L 21/768 (2013.01); H01L 21/76251 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 21/76898 (2013.01); H01L 21/84 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 27/20 (2013.01); H01L 28/10 (2013.01); H01L 29/0649 (2013.01); H01L 29/66772 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H03H 9/02566 (2013.01); H03H 9/24 (2013.01); H04B 1/40 (2013.01); H04B 1/44 (2013.01); H01L 23/3121 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/16 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68368 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/03 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15313 (2013.01);
Abstract
A method for fabricating a semiconductor device involves providing a transistor device, forming one or more electrical connections to the transistor device, forming one or more dielectric layers over at least a portion of the electrical connections, applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.