The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Aug. 01, 2016
Applicant:
Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;
Inventor:
Yasuhiro Fuwa, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/13 (2006.01); H01L 23/29 (2006.01); H01L 21/48 (2006.01); H01L 21/54 (2006.01); H01L 21/56 (2006.01); H01L 23/373 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 43/06 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/56 (2013.01); H01L 21/4803 (2013.01); H01L 21/4821 (2013.01); H01L 21/54 (2013.01); H01L 23/13 (2013.01); H01L 23/295 (2013.01); H01L 23/3121 (2013.01); H01L 23/3737 (2013.01); H01L 23/4951 (2013.01); H01L 23/49517 (2013.01); H01L 23/49582 (2013.01); H01L 23/49811 (2013.01); H01L 23/49861 (2013.01); H01L 43/065 (2013.01); H01L 43/10 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/15159 (2013.01);
Abstract
A semiconductor device includes a semiconductor element, a substrate formed with a recess in a main surface, a conductive layer formed on the substrate and electrically connected to the semiconductor element, and a sealing resin covering the semiconductor element. The substrate is made of an electrically insulative synthetic resin. The recess has a bottom surface on which the semiconductor element is mounted, and an intermediate surface connected to the main surface and the bottom surface. The bottom surface is orthogonal to the thickness direction of the substrate. The intermediate surface is inclined with respect to the bottom surface.