The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Sep. 12, 2017
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Assignee:
Toshiba Memory Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 7/08 (2006.01); G11C 7/22 (2006.01); G11C 7/10 (2006.01); G11C 13/00 (2006.01); G11C 7/02 (2006.01); G11C 11/16 (2006.01); G11C 27/02 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1051 (2013.01); G11C 7/02 (2013.01); G11C 7/1069 (2013.01); G11C 11/1673 (2013.01); G11C 11/1693 (2013.01); G11C 13/00 (2013.01); G11C 13/004 (2013.01); G11C 13/0061 (2013.01); G11C 27/024 (2013.01); G11C 27/026 (2013.01);
Abstract
According to one embodiment, a memory device includes: a memory cell; a read driver configured to supply a read pulse to the memory cell at the time of a read operation for the memory cell; a filter circuit configured to output a second signal in a first frequency domain from a first signal, the first signal being outputted from the memory cell by the read pulse; a hold circuit configured to hold a peak value of the second signal; and a sense amplifier circuit configured to read data from the memory cell based on the peak value.