The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Jun. 22, 2018
Applicants:

Shanghai Tianma Micro-electronics Co., Ltd., Shanghai, CN;

Tianma Micro-electronics Co.,ltd., Shenzhen, CN;

Inventors:

Feng Lu, Shanghai, CN;

Qijun Yao, Shanghai, CN;

Liang Liu, Shanghai, CN;

Shaolong Ma, Shanghai, CN;

Yingteng Zhai, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/041 (2006.01); H01L 27/12 (2006.01); G01L 1/18 (2006.01); G06F 3/044 (2006.01); G06F 3/045 (2006.01); G06F 3/042 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0416 (2013.01); G01L 1/18 (2013.01); G06F 3/0412 (2013.01); H01L 27/1214 (2013.01); G06F 3/044 (2013.01); G06F 3/045 (2013.01); G06F 3/0421 (2013.01); G06F 2203/04105 (2013.01);
Abstract

Provided are an array substrate, a touch display panel and a method for calculating touch pressure. The array substrate includes: a display region with a non-display region around the display region, thin film transistors in the display region and having an active layer, at least two semiconductor pressure sensors, a bias voltage applying circuit for applying a bias voltage to each semiconductor pressure sensor, and a voltage detecting circuit for acquiring a strain voltage from each semiconductor pressure sensor. A first straight line connecting a first connecting terminal and a second connecting terminal of the semiconductor pressure sensor intersects a second straight line connecting a third connecting terminal and a fourth connecting terminal of the semiconductor pressure sensor. The semiconductor pressure sensor is a semiconductor film in a polygonal structure having at least four sides, the active layer and the semiconductor film are in a same layer.


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