The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Feb. 19, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/16 (2006.01); G03F 7/00 (2006.01); H01L 21/306 (2006.01); H01L 21/027 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/168 (2013.01); G03F 7/0035 (2013.01); G03F 7/40 (2013.01); H01L 21/0273 (2013.01); H01L 21/306 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes: coating a first resist containing a photoacid generator or a thermal acid generator on a semiconductor substrate; forming a first opening portion in the first resist by optical exposure; subjecting a shrink agent containing an acid to a crosslinking reaction by the heat treatment to form a thermoset layer on an overall surface of the first resist; coating a second resist on the semiconductor substrate and the thermoset layer; and forming a second opening portion located above the first opening portion and larger than the first opening portion in the second resist by optical exposure.