The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Aug. 31, 2017
Applicants:

Nec Corporation, Tokyo, JP;

Photonics Electronics Technology Research Association, Tokyo, JP;

Inventors:

Tsuyoshi Horikawa, Tokyo, JP;

Tohru Mogami, Tokyo, JP;

Keizo Kinoshita, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/13 (2006.01); G02B 6/132 (2006.01); C23C 14/08 (2006.01); C23C 14/48 (2006.01); G02B 6/122 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/132 (2013.01); C23C 14/083 (2013.01); C23C 14/48 (2013.01); G02B 6/122 (2013.01); G02B 2006/12061 (2013.01);
Abstract

Provided is an optical waveguide circuit avoiding the difficulty of the property compensation based on temperature control, compensated with respect to the property variations due to fabrication error, particularly paid attention in a silicon waveguide, and being low in power consumption and high in performances. The optical waveguide circuit includes a silicon (Si) substrate, a buried oxide film (BOX) layer formed on the Si substrate, and an SOI (Silicon on Insulator) layer, formed on the BOX layer, including an optical element utilizing the SOI layer as a main optical transmission medium. At least part of a waveguide of the optical element includes uniformly distributed and thermally unstable crystal defects.


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