The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Dec. 16, 2016
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abhay Deshpande, Bangalore, IN;
Arun S. Iyer, Bangalore, IN;
Prasanth K. Vallur, Bangalore, IN;
Girish Anathahally Singrigowda, Bangalore, IN;
Stephen V. Kosonocky, Ft. Collins, CO (US);
Advanced Micro Devices, Inc., Santa Clara, CA (US);
Abstract
Various embodiments of a gate oxide breakdown detection technique detect gate oxide degradation due to stress on a per part basis without destroying functional circuits for an intended application. Stress on the gate oxide may be applied while nominal drain currents flow through a device, thereby stressing the device under conditions similar to actual operating conditions. The technique is relatively fast and does not require analog amplifiers or tuning of substantial amounts of other additional circuitry as compared to conventional gate oxide breakdown detection techniques.