The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Sep. 09, 2016
Applicant:

Shanghai Huali Microelectronics Corporation, Shanghai, CN;

Inventor:

Fei Luo, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/26 (2014.01); H01L 21/66 (2006.01); G01R 31/30 (2006.01);
U.S. Cl.
CPC ...
G01R 31/025 (2013.01); G01R 31/3008 (2013.01); H01L 22/14 (2013.01); G01R 31/26 (2013.01);
Abstract

A test layout, a system, and a method for detecting leakage current are disclosed. The test layout module includes M PN junction diode leakage current test units formed in the FEOL process, parallel-connect with a classical leakage current test unit formed in the metal layer; wherein, P-regions of the PN junction diodes are connected to a high potential, N-regions of the PN junction diodes are connected to a low potential, the junction areas of the PN junction diodes are different each other, each of the PN junction diode leakage current test units is controlled by one switch respectively, the positive integer M is greater than or equal to 1. Through paralleling the PN junction diodes formed in the FEOL process with the classical leakage current test unit in the metal layer, not only the required test layout area utilized to detect the leakage current in the metal layer is reduced, but also the detecting accuracy is further enhanced.


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