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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10246770 B1

PDFFull Text
Date of Patent:
Apr. 02, 2019

Filed:

Jun. 24, 2016

Silicide alloy film for semiconductor device electrode, and production method for silicide alloy film

Applicants:

Tanaka Kikinzoku Kogyo K.k., Chiyoda-ku, Tokyo, JP;

Tokyo Institute of Technology, Meguro-ku, Tokyo, JP;

Inventors:

Shunichiro Ohmi, Tokyo, JP;

Yasushi Masahiro, Tokyo, JP;

Assignees:

TANAKA KIKINZOKU KOGYO K.K., Tokyo, JP;

TOKYO INSTITUTE OF TECHNOLOGY, Tokyo, JP;

Attorneys:

Orrick, Herrington & Sutcliffe LLP

Joseph A. Calvaruso

Primary Examiner:

Michael E La Villa

Int. Cl.
CPC ...
C23C 14/58 (2006.01); C23C 14/18 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); C23C 16/42 (2006.01); C22C 27/00 (2006.01); C23C 28/00 (2006.01); C23C 14/16 (2006.01); C23C 14/24 (2006.01); C22C 28/00 (2006.01); H01L 21/28 (2006.01); C22C 30/00 (2006.01); C23C 14/14 (2006.01); C23C 14/34 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); C23C 14/35 (2006.01); C23C 14/46 (2006.01); C22C 5/04 (2006.01);
U.S. Cl.
CPC ...
C23C 14/5806 (2013.01); C22C 27/00 (2013.01); C22C 28/00 (2013.01); C22C 30/00 (2013.01); C23C 14/14 (2013.01); C23C 14/16 (2013.01); C23C 14/165 (2013.01); C23C 14/18 (2013.01); C23C 14/24 (2013.01); C23C 14/34 (2013.01); C23C 14/58 (2013.01); C23C 16/42 (2013.01); C23C 28/34 (2013.01); H01L 21/28 (2013.01); H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 21/32051 (2013.01); H01L 21/32053 (2013.01); H01L 29/417 (2013.01); H01L 29/456 (2013.01); H01L 29/78 (2013.01); C22C 5/04 (2013.01); C23C 14/35 (2013.01); C23C 14/46 (2013.01); Y10T 428/12528 (2015.01); Y10T 428/12535 (2015.01); Y10T 428/12875 (2015.01); Y10T 428/12993 (2015.01);
Abstract

The present invention relates to a silicide alloy film that is formed on a substrate containing Si, the silicide alloy film including a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 2.5 eV or less and 4.0 eV or more, and Si, the silicide alloy film having a work function of 4.3 eV or more and 4.9 eV or less. Here, the metal M1 is preferably Pt, Pd, Mo, Ir, W or Ru, and the metal M2 is preferably Hf, La, Er, Ho, Er, Eu, Pr or Sm. The silicide alloy film according to the present invention is a thin-film which has excellent heat-resistance and favorable electrical property.

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