The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Sep. 19, 2016
Applicant:
Skorpios Technologies, Inc., Albuquerque, NM (US);
Inventor:
John Y. Spann, Albuquerque, NM (US);
Assignee:
Skorpios Technologies, Inc., Albuquerque, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/063 (2006.01); H01S 5/022 (2006.01); G02B 6/12 (2006.01); H01S 5/026 (2006.01); H01S 5/02 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 3/0637 (2013.01); G02B 6/12 (2013.01); H01S 5/0206 (2013.01); H01S 5/026 (2013.01); H01S 5/0217 (2013.01); H01S 5/0228 (2013.01); G02B 2006/12121 (2013.01); H01S 5/021 (2013.01); H01S 5/3434 (2013.01); H01S 2301/173 (2013.01);
Abstract
A device for a gain medium for a semiconductor laser has an active region, a buffer layer, a substrate, and an etch stop between the buffer layer and the substrate. The device is bonded to a silicon platform having silicon devices, such as a waveguide and mirror. The substrate is removed, after bonding the device to the platform. The buffer layer is made of different material than the substrate to reduce undercut of the buffer layer during substrate removal compared to a buffer layer made of the same material as the substrate.