The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Jul. 10, 2017
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Inventors:
Kensuke Nagata, Nagoya, JP;
Katsutoshi Narita, Toyota, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/036 (2006.01); H01L 35/34 (2006.01); H01L 35/22 (2006.01); H01L 35/02 (2006.01); H01L 23/34 (2006.01); H01L 27/16 (2006.01);
U.S. Cl.
CPC ...
H01L 35/34 (2013.01); H01L 35/02 (2013.01); H01L 35/22 (2013.01); H01L 23/34 (2013.01); H01L 27/16 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, a polysilicon layer fixed to the semiconductor substrate, and a silicon nitride layer in contact with the polysilicon layer, wherein the polysilicon layer includes a n-type layer and a p-type layer in contact with the n-type layer. The semiconductor device manufacturing method includes forming the polysilicon layer covering at least one hydrogen-containing layer, and heating the polysilicon layer and the hydrogen-containing layer.