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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10243117 B1

PDFFull Text
Date of Patent:
Mar. 26, 2019

Filed:

May. 11, 2016

Method for producing optoelectronic devices and surface-mountable optoelectronic device

Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Siegfried Herrmann, Neukirchen, DE;

Ion Stoll, Tegernheim, DE;

Georg Roßbach, Regensburg, DE;

Assignee:

OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Selim U Ahmed

Int. Cl.
CPC ...
H01L 33/50 (2010.01); C25D 13/02 (2006.01); C25D 13/12 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/54 (2010.01); H01L 33/56 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 33/505 (2013.01); C25D 13/02 (2013.01); C25D 13/12 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/0095 (2013.01); H01L 33/32 (2013.01); H01L 33/50 (2013.01); H01L 33/502 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); H01L 33/486 (2013.01); H01L 2224/96 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.

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