The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Sep. 18, 2017
Applicant:

High Power Opto. Inc., Taichung, TW;

Inventors:

Li-Ping Chou, Taichung, TW;

Wan-Jou Chen, Taichung, TW;

Wei-Yu Yen, Taichung, TW;

Chih-Sung Chang, Taichung, TW;

Assignee:

High Power Opto. Inc., Taichung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/08 (2010.01); H01L 27/15 (2006.01); H01L 33/24 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 27/153 (2013.01); H01L 33/08 (2013.01); H01L 33/10 (2013.01); H01L 33/24 (2013.01); H01L 33/00 (2013.01); H01L 2924/00 (2013.01);
Abstract

A present invention includes a negative electrode, a substrate, an adhesive layer, an insulation layer and a reflective layer sequentially stacked. A P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer are sequentially stacked on the reflective layer to form an LED light emitting layer. A positive electrode, spaced from the LED light emitting layer, is further stacked on the reflective layer. The present invention further includes an electrical connection structure that penetrates through the insulation layer, and penetrates through, in a spaced manner from the insulation layer, the reflective layer, the P-type semiconductor layer and the light emitting layer. The electrical connection structure is electrically connected to the adhesive layer and the N-type semiconductor layer, and has a pattern distribution. The pattern distribution is least one strip-like shape to form the continuous electrode structure.


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