The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Jun. 24, 2016
Lg Innotek Co., Ltd., Seoul, KR;
Chan Keun Park, Seoul, KR;
LG INNOTEK CO., LTD., Seoul, KR;
Abstract
Embodiments relates to an ultraviolet light emitting diode, a method of manufacturing an ultraviolet light emitting diode, a light emitting diode package, and a LIGHTING DEVICE. An ultraviolet light emitting diode according to an embodiment includes: a substrate; a first undoped GaN layer including a planar upper surface and a V-pit on the substrate; a first nitride layer on the V-pit of the first undoped GaN layer; a first undoped AlGaN-based semiconductor layer on the first undoped GaN layer and the first nitride layer; and a second undoped GaN layer on the first undoped AlGaN-based semiconductor layer, wherein the first undoped AlGaN-based semiconductor layer includes a first region on the planar upper surface of the first undoped GaN layer and a second region located on the V-pit of of the first undoped GaN layer, and wherein an Al concentration of the first region may be greater than that of the second region.