The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Sep. 05, 2018
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/032 (2006.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/032 (2013.01); H01L 27/144 (2013.01); H01L 31/18 (2013.01); H01L 21/02172 (2013.01);
Abstract
Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide according the embodiment of the present invention comprises; the first substance layer containing silicon doped with an n-type dopant; and the second substance layer arranged on the first substance layer, and containing a vanadium oxide represented by the molecular formula of VxOy. Dopant concentration of the first substance layer can be higher than 1.0×10'cmand lower than 1.0×10cm, while the ratio of y to x in the molecular formula can be larger than 2 and smaller than 2.5.