The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Apr. 03, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Bing Dang, Chappaqua, NY (US);
John U. Knickerbocker, Monroe, NY (US);
Steven Lorenz Wright, Cortlandt Manor, NY (US);
Cornelia Tsang Yang, Medford, MA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/024 (2014.01); H01L 31/18 (2006.01); H01J 1/30 (2006.01);
U.S. Cl.
CPC ...
H01L 31/024 (2013.01); H01J 1/30 (2013.01); H01L 31/1892 (2013.01); H01L 31/1896 (2013.01); Y02E 10/50 (2013.01);
Abstract
A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The optoelectronic device excitable by visible light transmitted through the surrogate substrate.