The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Jun. 09, 2015
Applicant:
Lg Electronics Inc., Seoul, KR;
Inventors:
Youngsung Yang, Seoul, KR;
Junghoon Choi, Seoul, KR;
Changseo Park, Seoul, KR;
Hyungjin Kwon, Seoul, KR;
Assignee:
LG ELECTRONICS INC., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0745 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/02167 (2013.01); H01L 31/0745 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); H01L 31/1872 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.