Semiconductor device and method for manufacturing semiconductor device

Abstract

A semiconductor device () includes: a thin film transistor () including an oxide semiconductor layer () including a channel region, and a source contact region and a drain contact region arranged on opposite sides of the channel region; an insulating layer arranged so as to cover the oxide semiconductor layer (), the insulating layer having a contact hole (CH) through which the drain contact region is exposed; and a transparent electrode () to be in contact with the drain contact region in the contact hole (CH), wherein: as seen from a direction normal to the substrate, at least a part R of the drain contact region overlaps a gate electrode (); and on an arbitrary cross section that extends in a channel width direction across the at least part (R) of the drain contact region, a width of the oxide semiconductor layer () is greater than a width of the gate electrode (), and the gate electrode () is covered by the oxide semiconductor layer () with the gate insulating layer therebetween.