The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Aug. 21, 2017
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiya Yonehara, Kawasaki, JP;
Hisashi Saito, Kawasaki, JP;
Yosuke Kajiwara, Yokohama, JP;
Daimotsu Kato, Kawasaki, JP;
Tatsuo Shimizu, Shinagawa, JP;
Yasutaka Nishida, Tama, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×10atoms/cmor less.