The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Mar. 20, 2017
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventor:
Jun Nishimura, Kuwana, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a semiconductor portion, and an insulating portion. The insulating portion is provided in the stacked body and extends in a stacking direction and a first direction along a surface of the substrate, the first direction crossing the stacking direction. The insulating portion includes a first insulating film containing silicon oxide, a second insulating film containing silicon oxide, and a third insulating film located between the first insulating film and the second insulating film and containing silicon nitride.