The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Sep. 05, 2017
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A nitride semiconductor device includes a first semiconductor layer including a nitride semiconductor, a second semiconductor layer contacting the first semiconductor layer and including a nitride semiconductor, a source electrode, a drain electrode, a first gate electrode, a second gate electrode provided on an opposite side, a first insulating layer and a second insulating layer. The gate electrode has a protrusion portion inside the semiconductor layer. A distance between the first gate electrode and the protrusion portion of the second gate electrode is shorter than a distance between the source electrode and the second insulating layer, and shorter than a distance between the drain electrode and the second insulating layer.