The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Nov. 01, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/76224 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/7854 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a fin-type pattern formed on a substrate and including first and second sidewalls, which are defined by a trench, a field insulating film placed in contact with the first and second sidewalls and filling the trench, and an epitaxial pattern formed on the fin-type pattern and including a first epitaxial layer and a second epitaxial layer, which is formed on the first epitaxial layer.