The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Nov. 07, 2017
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;

Inventors:

Yuki Murakami, Toyota, JP;

Yasushi Urakami, Kariya, JP;

Yusuke Yamashita, Nagakute, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 21/0475 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01);
Abstract

A method of manufacturing a switching element is provided. The method including: preparing a semiconductor substrate which includes an n-type drain region, a p-type body region, and a trench penetrating the body region and reaching the drain region; and forming a lateral surface p-type region extending along a lateral surface of the trench below the body region by heating the semiconductor substrate so as to make a part of the body region flow into the trench. The switching element includes: a gate insulating layer covering an inner surface of the trench; a bottom p-type region in contact with the gate insulating layer at a bottom surface of the trench and connected to the lateral surface p-type region; an n-type source region; and a gate electrode provided in the trench.


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