The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Nov. 28, 2016
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Hajime Imai, Sakai, JP;

Tohru Daitoh, Sakai, JP;

Hisao Ochi, Sakai, JP;

Tetsuo Fujita, Sakai, JP;

Hideki Kitagawa, Sakai, JP;

Tetsuo Kikuchi, Sakai, JP;

Masahiko Suzuki, Sakai, JP;

Teruyuki Ueda, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1368 (2006.01); G09F 9/30 (2006.01); H01L 29/786 (2006.01); G02F 1/1333 (2006.01); G02F 1/1335 (2006.01); G06F 3/041 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1368 (2013.01); G02F 1/13338 (2013.01); G02F 1/133512 (2013.01); G06F 3/0412 (2013.01); G09F 9/30 (2013.01); H01L 27/1225 (2013.01); H01L 27/1259 (2013.01); H01L 29/786 (2013.01); G02F 2001/13685 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01);
Abstract

A semiconductor filmis provided so as to overlap with a light-shielding filmwhen viewed in a plan view. A second insulating filmhas a contact hole CHthat reaches a source electrodeand a drain electrode. A gate electrodeis provided on the second insulating filmso as to overlap with the semiconductor filmwhen viewed in a plan view, and at the same time, so as to overlap with none of the source electrodeand the drain electrodewhen viewed in a plan view. A third insulating filmis provided on the second insulating filmso as to cover the gate electrode, and at the same time, so as to be in contact with the source electrodeand the drain electrodethrough the contact hole CH


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