The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Sep. 11, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Daigo Ichinose, Nagoya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1157 (2017.01); H01L 27/11556 (2017.01); H01L 27/11565 (2017.01); H01L 27/11575 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor device includes a stacked body and an insulating portion. The stacked body includes first to fourth electrode layers. The first electrode layer extends along a first direction. The second electrode layer is arranged with the first electrode layer in a second direction. The third electrode layer is provided between the first electrode layer and a word line. The fourth electrode layer is provided between the second electrode layer and the word line. The insulating portion includes first and second portions. The first portion extends along the first direction between the first electrode layer and the second electrode layer and between a portion of the third electrode layer and a portion of the fourth electrode layer. The second portion extends in the third direction between the third electrode layer and the fourth electrode layer, and through the word line.


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